onsemi美国

NTHD3100CT1

停产FET,MOSFET 阵列

MOSFET N/P-CH 20V 2.9A CHIPFET

全部替代型号

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C2.9A, 3.2A
Drain to Source Voltage (Vdss)20V
Power - Max1.1W
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / Case8-SMD, Flat Lead
Supplier Device PackageChipFET™
其他
Base Product NumberNTHD3100
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds165pF @ 10V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs80mOhm @ 2.9A, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.2V @ 250µA

技术资料