NTJS3151PT1G
onsemiUnited States

NTJS3151PT1G

ActiveSingle FETs, MOSFETsSC-88/SC70-6/SOT-363

MOSFET P-CH 12V 2.7A SC88/SC70-6

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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage12 V
Continuous drain current2.7 A
On-resistance60 mΩMax · 3.3A
Gate threshold voltage1.2 VMax · 100μA
Power
Current - Continuous Drain (Id) @ 25°C2.7A (Ta)
Drain to Source Voltage (Vdss)12 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Power Dissipation (Max)625mW (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88/SC70-6/SOT-363
Other
Base Product NumberNTJS3151
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds850 pF @ 12 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs60mOhm @ 3.3A, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.2V @ 100µA

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