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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage20 V
Continuous drain current3.3 A
On-resistance60 mΩMax · 3.3A
Gate threshold voltage1.2 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C3.3A (Ta)
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Power Dissipation (Max)1W (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88/SC70-6/SOT-363
Other
Base Product NumberNTJS4151
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds850 pF @ 10 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs60mOhm @ 3.3A, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.2V @ 250µA

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