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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage30 V
Continuous drain current9.5 ~ 64 A
On-resistance5.5 mΩMax · 30A
Gate threshold voltage2.5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C9.5A (Ta), 64A (Tc)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 11.5V
Power Dissipation (Max)870mW (Ta), 42.4W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Supplier Device Package5-DFN (5x6) (8-SOFL)
Other
Base Product NumberNTMFS4
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs43.5 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds2354 pF @ 12 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs5.5mOhm @ 30A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

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