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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage25 V
Continuous drain current15.2 ~ 149 A
On-resistance2.5 mΩMax · 15A
Gate threshold voltage2.5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C15.2A (Ta), 149A (Tc)
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On, Min Rds On)3.2V, 10V
Power Dissipation (Max)900mW (Ta), 86.2W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Supplier Device PackageSO-8FL
Other
Base Product NumberNTMFS4
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs85 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds4830 pF @ 12 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs2.5mOhm @ 15A, 10V
SeriesSENSEFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±16V
Vgs(th) (Max) @ Id2.5V @ 250µA

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