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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage30 V
Continuous drain current9 ~ 44 A
On-resistance7 mΩMax · 30A
Gate threshold voltage2.2 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C9A (Ta), 44A (Tc)
Drain to Source Voltage (Vdss)30 V
Power Dissipation (Max)920mW (Ta), 21.6W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / Case8-PowerTDFN, 5 Leads
Supplier Device Package5-DFN (5x6) (8-SOFL)
Other
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1004 pF @ 15 V
MfrSanyo
Product StatusObsolete
Rds On (Max) @ Id, Vgs7mOhm @ 30A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.2V @ 250µA

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