onsemi美国

NTMFS5113PLT1G

在产单 FET,MOSFET5-DFN

NFET SO8FL 60V 69A 16MOHM

沟道P 沟道
耐压60 V
连续漏极电流10 ~ 64 A
导通电阻14 mΩ

全部替代型号

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技术参数

沟道P 沟道
耐压60 V
连续漏极电流10 ~ 64 A
导通电阻14 mΩ最大 · 17A
阈值电压2.5 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C10A (Ta), 64A (Tc)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)3.8W (Ta), 150W (Tc)
环境与封装
Grade-
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerTDFN, 5 Leads
Qualification-
Supplier Device Package5-DFN (5x6) (8-SOFL)
其他
Base Product NumberNTMFS5113
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4400 pF @ 25 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs14mOhm @ 17A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

技术资料