onsemi美国

NTMS5P02R2G

在产单 FET,MOSFET8-SOIC

MOSFET P-CH 20V 3.95A 8SOIC

沟道P 沟道
耐压20 V
连续漏极电流3.95 A
导通电阻33 mΩ

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技术参数

沟道P 沟道
耐压20 V
连续漏极电流3.95 A
导通电阻33 mΩ最大 · 5.4A
阈值电压1.25 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C3.95A (Ta)
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Power Dissipation (Max)790mW (Ta)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC
其他
Base Product NumberNTMS5
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1900 pF @ 16 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs33mOhm @ 5.4A, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id1.25V @ 250µA

技术资料