onsemiUnited States
MOSFET P-CH 20V 2.3A 8SOIC
All alternatives
View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage20 V
Continuous drain current2.3 A
On-resistance90 mΩMax · 2.4A
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Power Dissipation (Max) | - |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Package | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Other | |
| Base Product Number | NTMSD2 |
| FET Feature | Schottky Diode (Isolated) |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 16 V |
| Mfr | onsemi |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.4A, 4.5V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | - |
Documents
No documents are linked to this part yet.