onsemiUnited States
T8-80V IN PQFN88 FOR INDU
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage80 V
Continuous drain current41 ~ 335 A
On-resistance1.1 mΩMax · 90A
Gate threshold voltage4 VMax · 590μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 41A (Ta), 335A (Tc) |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Power Dissipation (Max) | 5W (Ta), 300W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-DFNW (8.3x8.4) |
| Other | |
| Base Product Number | NTMTS1D |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 147 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10100 pF @ 40 V |
| Mfr | onsemi |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 1.1mOhm @ 90A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 590µA |