NTMTS1D5N08MC
onsemi美国

NTMTS1D5N08MC

在产单 FET,MOSFET8-DFNW

PTNG 80V IN CEBU PQFN88

沟道N 沟道
耐压80 V
连续漏极电流33 ~ 287 A
导通电阻1.56 mΩ

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技术参数

沟道N 沟道
耐压80 V
连续漏极电流33 ~ 287 A
导通电阻1.56 mΩ最大 · 80A
阈值电压4 V最大 · 650μA
电源
Current - Continuous Drain (Id) @ 25°C33A (Ta), 287A (Tc)
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Power Dissipation (Max)3.3W (Ta)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerTDFN
Supplier Device Package8-DFNW (8.3x8.4)
其他
Base Product NumberNTMTS1D
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds10400 pF @ 40 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs1.56mOhm @ 80A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 650µA

器件图片

技术资料