NTMTS4D3N15MC
onsemi美国

NTMTS4D3N15MC

在产单 FET,MOSFET8-DFNW

SINGLE N-CHANNEL POWER MOSFET 15

沟道N 沟道
耐压150 V
连续漏极电流22 ~ 174 A
导通电阻4.45 mΩ

全部替代型号

查看完整报告

技术参数

沟道N 沟道
耐压150 V
连续漏极电流22 ~ 174 A
导通电阻4.45 mΩ最大 · 95A
阈值电压4.5 V最大 · 521μA
电源
Current - Continuous Drain (Id) @ 25°C22A (Ta), 174A (Tc)
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Power Dissipation (Max)5W (Ta), 293W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerTDFN
Supplier Device Package8-DFNW (8.3x8.4)
其他
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6514 pF @ 75 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs4.45mOhm @ 95A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 521µA

器件图片

技术资料