onsemiUnited States

NTP082N65S3F

Not For New DesignsSingle FETs, MOSFETsTO-220-3

MOSFET N-CH 650V 40A TO220-3

All alternatives

ChannelN-channel

Drain-source voltage650 V

Continuous drain current40 A

On-resistance82 mΩMax · 20A

Gate threshold voltage5 VMax · 4mA

Power
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	313W (Tc)
Environment and package
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Package	Tube
Package / Case	TO-220-3
Supplier Device Package	TO-220-3
Other
Base Product Number	NTP082
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	3410 pF @ 400 V
Mfr	onsemi
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	82mOhm @ 20A, 10V
Series	FRFET®, SuperFET® II
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	5V @ 4mA