onsemi美国

NTPF082N65S3F

不推荐用于新设计单 FET,MOSFETTO-220F-3

MOSFET N-CH 650V 40A TO220F

沟道N 沟道
耐压650 V
连续漏极电流40 A
导通电阻82 mΩ

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技术参数

沟道N 沟道
耐压650 V
连续漏极电流40 A
导通电阻82 mΩ最大 · 20A
阈值电压5 V最大 · 4mA
电源
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)48W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220F-3
其他
Base Product NumberNTPF082
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3240 pF @ 400 V
Mfronsemi
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs82mOhm @ 20A, 10V
SeriesSuperFET® III
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 4mA

技术资料