onsemi美国

NVMFS021N10MCLT1G

在产单 FET,MOSFET5-DFN

PTNG 100V LL SO8FL

沟道N 沟道
耐压100 V
连续漏极电流8.4 ~ 31 A
导通电阻23 mΩ

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技术参数

沟道N 沟道
耐压100 V
连续漏极电流8.4 ~ 31 A
导通电阻23 mΩ最大 · 7A
阈值电压3 V最大 · 42μA
电源
Current - Continuous Drain (Id) @ 25°C8.4A (Ta), 31A (Tc)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)3.6W (Ta), 49W (Tc)
环境与封装
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerTDFN, 5 Leads
QualificationAEC-Q101
Supplier Device Package5-DFN (5x6) (8-SOFL)
其他
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds850 pF @ 50 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs23mOhm @ 7A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 42µA

技术资料