onsemi美国

NVMFS040N10MCLT1G

在产单 FET,MOSFET5-DFN

PTNG 100V LL SO8FL

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沟道N 沟道
耐压100 V
连续漏极电流6.5 ~ 21 A
导通电阻38 mΩ

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技术参数

沟道N 沟道
耐压100 V
连续漏极电流6.5 ~ 21 A
导通电阻38 mΩ最大 · 5A
阈值电压3 V最大 · 26μA
电源
Current - Continuous Drain (Id) @ 25°C6.5A (Ta), 21A (Tc)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)3.5W (Ta), 36W (Tc)
环境与封装
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerTDFN, 5 Leads
QualificationAEC-Q101
Supplier Device Package5-DFN (5x6) (8-SOFL)
其他
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds500 pF @ 50 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs38mOhm @ 5A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 26µA

技术资料

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