onsemi美国

NVMFS4C01NT3G

不推荐用于新设计单 FET,MOSFET5-DFN

MOSFET N-CH 30V 49A/319A 5DFN

沟道N 沟道
耐压30 V
连续漏极电流49 ~ 319 A
导通电阻900 µΩ

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技术参数

沟道N 沟道
耐压30 V
连续漏极电流49 ~ 319 A
导通电阻900 µΩ最大 · 30A
阈值电压2.2 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C49A (Ta), 319A (Tc)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)3.84W (Ta), 161W (Tc)
环境与封装
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
QualificationAEC-Q101
Supplier Device Package5-DFN (5x6) (8-SOFL)
其他
Base Product NumberNVMFS4
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds10144 pF @ 15 V
Mfronsemi
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs0.9mOhm @ 30A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.2V @ 250µA

技术资料