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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage40 V
Continuous drain current16 A
On-resistance7.5 mΩMax · 40A
Gate threshold voltage3.5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C16A (Ta)
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)3.7W (Ta), 112W (Tc)
Environment and package
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
QualificationAEC-Q101
Supplier Device Package5-DFN (5x6) (8-SOFL)
Other
Base Product NumberNVMFS5833
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs32.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1714 pF @ 25 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs7.5mOhm @ 40A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 250µA

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