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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage40 V
Continuous drain current370 A
On-resistance670 µΩMax · 50A
Gate threshold voltage2 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C370A (Tc)
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)200W (Tc)
Environment and package
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
QualificationAEC-Q101
Supplier Device Package5-DFN (5x6) (8-SOFL)
Other
Base Product NumberNVMFS5
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs81 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds12168 pF @ 25 V
Mfronsemi
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs0.67mOhm @ 50A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA

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