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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage40 V
Continuous drain current21 ~ 78 A
On-resistance4.5 mΩMax · 35A
Gate threshold voltage2 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C21A (Ta), 78A (Tc)
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)3.6W (Ta), 50W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Supplier Device Package5-DFN (5x6) (8-SOFL)
Other
Base Product NumberNVMFS5
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 25 V
Mfronsemi
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs4.5mOhm @ 35A, 10V
SeriesAutomotive, AEC-Q101
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA

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