onsemi美国

NVMFS6B05NLT3G

停产单 FET,MOSFET5-DFN

MOSFET N-CH 100V 17A 5DFN

沟道N 沟道
耐压100 V
连续漏极电流114 A
导通电阻5.6 mΩ

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技术参数

沟道N 沟道
耐压100 V
连续漏极电流114 A
导通电阻5.6 mΩ最大 · 20A
阈值电压3 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C114A (Tc)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)3.8W (Ta), 165W (Tc)
环境与封装
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
QualificationAEC-Q101
Supplier Device Package5-DFN (5x6) (8-SOFL)
其他
Base Product NumberNVMFS6
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3980 pF @ 25 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs5.6mOhm @ 20A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±16V
Vgs(th) (Max) @ Id3V @ 250µA

技术资料