onsemi美国

NVMFSW6D1N08HT1G

在产单 FET,MOSFET5-DFN

MOSFET N-CH 80V 17A/89A 5DFN

沟道N 沟道
耐压80 V
连续漏极电流17 ~ 89 A
导通电阻5.5 mΩ

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技术参数

沟道N 沟道
耐压80 V
连续漏极电流17 ~ 89 A
导通电阻5.5 mΩ最大 · 20A
阈值电压4 V最大 · 120μA
电源
Current - Continuous Drain (Id) @ 25°C17A (Ta), 89A (Tc)
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)3.8W (Ta), 104W (Tc)
环境与封装
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerTDFN, 5 Leads
QualificationAEC-Q101
Supplier Device Package5-DFN (5x6) (8-SOFL)
其他
Base Product NumberNVMFSW6
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2085 pF @ 40 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs5.5mOhm @ 20A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 120µA

技术资料