onsemiUnited States
MOSFET N-CH 60V 39A/262A 8LFPAK
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage60 V
Continuous drain current39 ~ 262 A
On-resistance1.3 mΩMax · 50A
Gate threshold voltage2 VMax · 280μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 39A (Ta), 262A (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 4W (Ta), 180W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | SOT-1205, 8-LFPAK56 |
| Supplier Device Package | 8-LFPAK |
| Other | |
| Base Product Number | NVMJS1 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 103 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7430 pF @ 30 V |
| Mfr | onsemi |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 1.3mOhm @ 50A, 10V |
| Series | Automotive, AEC-Q101 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2V @ 280µA |
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