onsemiUnited States
MOSFET P-CH 20V 3.95A 8SOIC
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage20 V
Continuous drain current3.95 A
On-resistance33 mΩMax · 5.4A
Gate threshold voltage1.25 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.95A (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Power Dissipation (Max) | - |
| Environment and package | |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Qualification | AEC-Q101 |
| Supplier Device Package | 8-SOIC |
| Other | |
| Base Product Number | NVMS5P02 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 16 V |
| Mfr | onsemi |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 5.4A, 4.5V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.25V @ 250µA |