NXV100XPR

在产单 FET,MOSFETTO-236AB

NXV100XP/SOT23/TO-236AB

沟道P 沟道
耐压30 V
连续漏极电流1.5 A
导通电阻140 mΩ

全部替代型号

查看完整报告

技术参数

沟道P 沟道
耐压30 V
连续漏极电流1.5 A
导通电阻140 mΩ最大 · 1.5A
阈值电压900 mV最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C1.5A (Ta)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Power Dissipation (Max)340mW (Ta), 2.1W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageTO-236AB
其他
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds354 pF @ 15 V
MfrNexperia USA Inc.
Product StatusActive
Rds On (Max) @ Id, Vgs140mOhm @ 1.5A, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id900mV @ 250µA

技术资料