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Technical parameters

Key specs

TypePNP
Collector-emitter voltage25 V
Collector current4 AMax
DC current gain801A
Power1.2 WMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)4 A
Power - Max1.2 W
Voltage - Collector Emitter Breakdown (Max)25 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 1A, 2V
Frequency - Transition75MHz
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223-4
Other
Base Product NumberNZT749
Mfronsemi
Product StatusObsolete
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic300mV @ 100mA, 1A

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