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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Drain (Idss) @ Vds (Vgs=0) | 10 mA @ 20 V |
| Power - Max | 350 mW |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Voltage - Cutoff (VGS off) @ Id | 10 V @ 1 µA |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
| Other | |
| Base Product Number | P1086 |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 45pF @ 15V |
| Mfr | onsemi |
| Product Status | Obsolete |
| Resistance - RDS(On) | 75 Ohms |
| Series | - |
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