DIODE SIL CARB 650V 23A TO220-2
反向耐压650 V
平均整流电流23 A
类型肖特基
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反向耐压650 V
平均整流电流23 A
类型肖特基
| 电源 | |
|---|---|
| Current - Average Rectified (Io) | 23A |
| Current - Reverse Leakage @ Vr | 30 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| 环境与封装 | |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Package | Tube |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220-2 |
| 其他 | |
| Mfr | PN Junction Semiconductor |
| Product Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| Series | P3D |
| Speed | No Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |