PN Junction SemiconductorUnited States
SICFET N-CH 650V 29A TO-220-3
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage650 V
Continuous drain current29 A
On-resistance158 mΩMax · 10A
Gate threshold voltage2.2 VMax · 5mA (Typ)
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 29A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Power Dissipation (Max) | 153W |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220-2L |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Mfr | PN Junction Semiconductor |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 158mOhm @ 10A, 15V |
| Series | P3M |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | +20V, -8V |
| Vgs(th) (Max) @ Id | 2.2V @ 5mA (Typ) |