SICFET N-CH 1700V 1.97A TO-220F-
沟道N 沟道
耐压1.7 kV
连续漏极电流1.97 A
导通电阻3.6 Ω
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沟道N 沟道
耐压1.7 kV
连续漏极电流1.97 A
导通电阻3.6 Ω最大 · 0.25A
阈值电压2.2 V最大 · 1.5mA (Typ)
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.97A |
| Drain to Source Voltage (Vdss) | 1700 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Power Dissipation (Max) | 19W |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Package / Case | TO-220F-2 |
| Supplier Device Package | TO-220F-2L |
| 其他 | |
| FET Feature | - |
| FET Type | N-Channel |
| Mfr | PN Junction Semiconductor |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 0.25A, 15V |
| Series | P3M |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | +19V, -8V |
| Vgs(th) (Max) @ Id | 2.2V @ 1.5mA (Typ) |
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