Nexperia USA Inc.Netherlands
MOSFET N-CH 12V 3.9A 4WLCSP
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage12 V
Continuous drain current3.9 A
On-resistance67 mΩMax · 3A
Gate threshold voltage900 mVMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Ta) |
| Drain to Source Voltage (Vdss) | 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Power Dissipation (Max) | 400mW (Ta), 12.5W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 4-XFBGA, WLCSP |
| Supplier Device Package | 4-WLCSP (0.78x0.78) |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 6 V |
| Mfr | Nexperia USA Inc. |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 67mOhm @ 3A, 4.5V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |