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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage12 V
Continuous drain current7.3 A
On-resistance18 mΩMax · 3A
Gate threshold voltage900 mVMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C7.3A (Ta)
Drain to Source Voltage (Vdss)12 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Power Dissipation (Max)556mW (Ta), 12.5W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case6-XFBGA, WLCSP
Supplier Device Package6-WLCSP (1.48x0.98)
Other
Base Product NumberPMCM6501
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds920 pF @ 6 V
MfrNexperia USA Inc.
Product StatusActive
Rds On (Max) @ Id, Vgs18mOhm @ 3A, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id900mV @ 250µA

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