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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage60 V
Continuous drain current4.5 A
On-resistance60 mΩMax · 3.4A
Gate threshold voltage2.7 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C4.5A (Ta)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)560mW (Ta), 6.25W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseSC-74, SOT-457
Supplier Device Package6-TSOP
Other
Base Product NumberPMN55
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds646 pF @ 30 V
MfrNexperia USA Inc.
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs60mOhm @ 3.4A, 10V
SeriesTrenchMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.7V @ 250µA

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