Nexperia USA Inc.Netherlands
SMALL SIGNAL MOSFET FOR MOBILE
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current12 A
On-resistance8.6 mΩMax · 12A
Gate threshold voltage2.2 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 1.9W (Ta), 12.5W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Supplier Device Package | DFN2020M-6 |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 914 pF @ 15 V |
| Mfr | Nexperia USA Inc. |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 8.6mOhm @ 12A, 10V |
| Series | TrenchMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Documents
No documents are linked to this part yet.