SMALL SIGNAL MOSFET FOR MOBILE
沟道P 沟道
耐压20 V
连续漏极电流10.5 A
导通电阻11.5 mΩ
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沟道P 沟道
耐压20 V
连续漏极电流10.5 A
导通电阻11.5 mΩ最大 · 10.5A
阈值电压1 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10.5A (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Power Dissipation (Max) | 1.9W (Ta), 12.5W (Tc) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Supplier Device Package | DFN2020M-6 |
| 其他 | |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1730 pF @ 10 V |
| Mfr | Nexperia USA Inc. |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 11.5mOhm @ 10.5A, 4.5V |
| Series | TrenchMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |