MOSFET P-CH 20V 3.2A 6DFN
沟道P 沟道
耐压20 V
连续漏极电流3.2 A
导通电阻122 mΩ
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沟道P 沟道
耐压20 V
连续漏极电流3.2 A
导通电阻122 mΩ最大 · 3.2A
阈值电压1.25 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 3V, 4.5V |
| Power Dissipation (Max) | 550mW (Ta) |
| 环境与封装 | |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 6-UDFN Exposed Pad |
| Qualification | AEC-Q101 |
| Supplier Device Package | DFN2020MD-6 |
| 其他 | |
| Base Product Number | PMPB100 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 388 pF @ 10 V |
| Mfr | Nexperia USA Inc. |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 122mOhm @ 3.2A, 4.5V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | +8V, -10V |
| Vgs(th) (Max) @ Id | 1.25V @ 250µA |