Nexperia USA Inc.Netherlands
MOSFET N-CH 20V 9A DFN2020MD-6
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage20 V
Continuous drain current9 A
On-resistance14 mΩMax · 9A
Gate threshold voltage900 mVMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Power Dissipation (Max) | 1.7W (Ta), 12.5W (Tc) |
| Environment and package | |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Qualification | AEC-Q101 |
| Supplier Device Package | DFN2020MD-6 |
| Other | |
| Base Product Number | PMPB10 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2175 pF @ 10 V |
| Mfr | Nexperia USA Inc. |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 9A, 4.5V |
| Series | TrenchMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |