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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage30 V
Continuous drain current8.7 A
On-resistance15.5 mΩMax · 8.7A
Gate threshold voltage2.5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C8.7A (Ta)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)1.9W (Ta), 12.5W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case6-UDFN Exposed Pad
Supplier Device PackageDFN2020M-6
Other
Base Product NumberPMPB12
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1638 pF @ 15 V
MfrNexperia USA Inc.
Product StatusActive
Rds On (Max) @ Id, Vgs15.5mOhm @ 8.7A, 10V
SeriesTrenchMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

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