Nexperia USA Inc.Netherlands
MOSFET P-CH 40V 6A DFN
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage40 V
Continuous drain current6 A
On-resistance43 mΩMax · 6A
Gate threshold voltage2.7 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 2.27W (Ta), 15W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Supplier Device Package | DFN2020MD-6 |
| Other | |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1260 pF @ 20 V |
| Mfr | Nexperia USA Inc. |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 6A, 10V |
| Series | Automotive, AEC-Q101 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.7V @ 250µA |
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