All alternatives

View full report

Technical parameters

Key specs

ChannelN-channel
Drain-source voltage30 V
Continuous drain current6 A
On-resistance21 mΩMax · 6A
Gate threshold voltage2 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)510mW (Ta), 6.94W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageTO-236AB
Other
Base Product NumberPMV20
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds435 pF @ 15 V
MfrNexperia USA Inc.
Product StatusActive
Rds On (Max) @ Id, Vgs21mOhm @ 6A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA

Documents