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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage30 V
Continuous drain current3.7 A
On-resistance44 mΩMax · 3.7A
Gate threshold voltage900 mVMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C3.7A (Ta)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Power Dissipation (Max)490mW (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageTO-236AB
Other
Base Product NumberPMV40UN2
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds635 pF @ 15 V
MfrNexperia USA Inc.
Product StatusActive
Rds On (Max) @ Id, Vgs44mOhm @ 3.7A, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id900mV @ 250µA

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