Nexperia USA Inc.Netherlands
MOSFET P-CH 30V 1A DFN1006B-3
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage30 V
Continuous drain current1 A
On-resistance510 mΩMax · 1A
Gate threshold voltage950 mVMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Power Dissipation (Max) | 350mW (Ta), 6.25W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 3-XFDFN |
| Supplier Device Package | DFN1006B-3 |
| Other | |
| Base Product Number | PMZB320 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 122 pF @ 15 V |
| Mfr | Nexperia USA Inc. |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 510mOhm @ 1A, 4.5V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
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