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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage45 V
Collector current100 mAMax
DC current gain1010μA
Power625 mWMax
Power
Current - Collector Cutoff (Max)10nA
Current - Collector (Ic) (Max)100 mA
Power - Max625 mW
Voltage - Collector Emitter Breakdown (Max)45 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 10µA, 5V
Frequency - Transition-
Environment and package
Mounting TypeThrough Hole
Operating Temperature-
PackageBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3
Other
Base Product NumberPN930
Mfronsemi
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1V @ 500µA, 10mA

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