NXP USA Inc.Netherlands
MOSFET N-CH 60V 40A 8DFN
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage60 V
Continuous drain current40 A
On-resistance14 mΩMax · 10A
Gate threshold voltage4 VMax · 1mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 65W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 8-VDFN Exposed Pad |
| Supplier Device Package | 8-DFN3333 (3.3x3.3) |
| Other | |
| Base Product Number | PSMN0 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 19.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1264 pF @ 30 V |
| Mfr | NXP USA Inc. |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 10A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
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