PSMN1R2-30YLDX

PSMN1R2-30YLDX

在产单 FET,MOSFETSC-100

MOSFET N-CH 30V 100A LFPAK56

查看国产替代问 AI FAE
沟道N 沟道
耐压30 V
连续漏极电流100 A
导通电阻1.24 mΩ

全部替代型号

查看完整报告

技术参数

沟道N 沟道
耐压30 V
连续漏极电流100 A
导通电阻1.24 mΩ最大 · 25A
阈值电压2.2 V最大 · 1mA
电源
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)194W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseSC-100, SOT-669
Supplier Device PackageLFPAK56, Power-SO8
其他
Base Product NumberPSMN1R2
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4616 pF @ 15 V
MfrNexperia USA Inc.
Product StatusActive
Rds On (Max) @ Id, Vgs1.24mOhm @ 25A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.2V @ 1mA

器件图片

技术资料

该型号暂未收录资料。