Nexperia USA Inc.Netherlands
NEXTPOWER 80/100V MOSFETS
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage80 V
Continuous drain current270 A
On-resistance1.8 mΩMax · 25A
Gate threshold voltage4 VMax · 1mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 270A (Ta) |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Power Dissipation (Max) | 341W (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | SOT-1235 |
| Supplier Device Package | LFPAK88 (SOT1235) |
| Other | |
| Base Product Number | PSMN1R8 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 222 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15319 pF @ 40 V |
| Mfr | Nexperia USA Inc. |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 25A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |