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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage30 V
Continuous drain current70 A
On-resistance2.4 mΩMax · 25A
Gate threshold voltage2.2 VMax · 1mA
Power
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)91W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseSOT-1210, 8-LFPAK33 (5-Lead)
Supplier Device PackageLFPAK33
Other
Base Product NumberPSMN2R4
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3264 pF @ 15 V
MfrNexperia USA Inc.
Product StatusActive
Rds On (Max) @ Id, Vgs2.4mOhm @ 25A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.2V @ 1mA

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