Rohm SemiconductorJapan
MOSFET N-CH 500V 19A LPTS
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage500 V
Continuous drain current19 A
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta) |
| Drain to Source Voltage (Vdss) | 500 V |
| Power Dissipation (Max) | 100W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | LPTS |
| Other | |
| Base Product Number | R5019 |
| FET Feature | - |
| FET Type | N-Channel |
| Mfr | Rohm Semiconductor |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | - |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | - |
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