R6504END3TL1

在产单 FET,MOSFETTO-252

650V 4A TO-252, LOW-NOISE POWER

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沟道N 沟道
耐压650 V
连续漏极电流4 A
导通电阻1.05 Ω

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技术参数

沟道N 沟道
耐压650 V
连续漏极电流4 A
导通电阻1.05 Ω最大 · 1.5A
阈值电压4 V最大 · 130μA
电源
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)58W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature150°C
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252
其他
Base Product NumberR6504
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds220 pF @ 25 V
MfrRohm Semiconductor
Product StatusActive
Rds On (Max) @ Id, Vgs1.05Ohm @ 1.5A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 130µA

技术资料

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