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Technical parameters

Power
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)
Drain to Source Voltage (Vdss)12V
Power - Max2W (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC
Other
Base Product NumberRF1K4
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds750pF @ 10V
MfrFairchild Semiconductor
Product StatusActive
Rds On (Max) @ Id, Vgs50mOhm @ 3.5A, 5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250µA

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